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UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation

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UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation

Brand Name : YJJ

Model Number : GS-AB-S

Place of Origin : CHINA

MOQ : 5

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 1501/pcs/pre

Delivery Time : 3-5work days

Packaging Details : Tubes of

Material : gallium nitride base material

Broadband : UVA+UVB+UVC photodiode

Principle : Operating in photovoltaic mode

Packaging : TO-46

Test object : Ultraviolet detection

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Product Description:

GS-AB-S GaN-based UV photodiode

Features:

Broad band UVA+UVB+UVC photodiode

Photovoltaic mode operation

TO-46metal housing

Good visible blindness

High responsivity and low dark current

UV index monitoring, UV radiation dose measurement, flame detection

Specification

Parameters Symbol Value Unit
Maximum ratings
Operation temperature range Topt -25-85 oC
Storage temperature range Tsto -40-85 oC
Soldering temperature (3 s) Tsol 260 oC
Reverse voltage Vr-max -10 V
General characteristics (25 oC)
Chip size A 1 mm2
Dark current (Vr = -1 V) Id <1 nA
Temperature coefficient (@265 nm) Tc 0.05 %/ oC
Capacitance (at 0 V and 1 MHz) Cp 18 pF
Spectral response characteristics (25 oC)
Wavelength of peak responsivity λ p 355 nm
Peak responsivity (at 355 nm) Rmax 0.20 A/W
Spectral response range (R=0.1×Rmax) - 210-370 nm
UV-visible rejection ratio (Rmax/R400 nm) - >104 -

Specifications:

Specifications Parameters
Peak wavelength 355NM
Light sensitivity 0.20A/W
Rise time 3US
Test conditions typical values, Ta=25°

UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation


Product Tags:

UV Photodiode Sensor GS-AB-S

      

GaN-Based UV Photodiode Sensor

      

UVA UV Photodiode

      
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UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation Images

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