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YJJ S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

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YJJ S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Brand Name : HAMAMATSU

Model Number : S1337-16BQ

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 2200

Delivery Time : 3 days

Packaging Details : piping

Photosensitivity (typical value) : 0.5A /W

Dark current (Max.) : 50 pA

Rise time (typical value) : 0.2μs

Junction capacitance (typical) : 65 pF

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Product Description:

S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Features:

Receiving surface 5.9 × 1.1mm

Encapsulated ceramics

Package category --

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 50 pA

Rise time (typical value) 0.2μs

Junction capacitance (typical) 65 pF

Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Specifications:

Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 50 pA

YJJ S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands


Product Tags:

Low Capacitance Silicon Photodiode

      
YJJ S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands Manufactures

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