YJJ S8745-01 S8746-01 Silicon Photodiodes With Preamplifier Are Used For Low-Light Measurement

Product Description:

YJJ S8745-01 S8746-01 Silicon Photodiodes With Preamplifier Are Used For Low-Light Measurement

Features:

photodiode and the preamplifier are integrated with feedback resistors and capacitors.

This is a low-noise sensor, consisting of a silicon photodiode, an operational amplifier, feedback resistors and capacitors, all integrated into a small package. By simply connecting it to the power supply, it can be used for low-light measurement, such as in analytical instruments and measuring devices. The light-receiving surface of the photodiode is internally connected to the GND terminal, making it highly resistant to EMC noise.

Characteristics
- Use low-power FET input operational amplifier
- Built-in Rf = 1 GΩ and Cf = 5 pF
- Achieve variable gain through external connected resistors
- Low noise, low NEP
- Encapsulated with shielding effect
- Highly resistant to EMC noise Detailed parameters
Light-emitting surface: 2.4 × 2.4 mm
Package: Metal
Package type: TO-5
Cooling: Non-cooling type
Reverse voltage (maximum value): 20 V
Spectral response range: 190 to 1100 nm
Maximum sensitivity wavelength (typical value): 960 nm
Noise equivalent power (typical value): 11.0 × 10-15 W/Hz1/2
Measurement conditions: Typical values: Ta = 25°C, VCC = ±15V, RL = 1MΩ, Photographic sensitivity: λ = λp, Noise equivalent power: λ = λp, f = 10Hz, unless otherwise specified

Specifications:

silicon photodiodes with preamplifier

low-light measurement photodiodes

infrared photoelectric sensor diodes

YJJ S8745-01 S8746-01 Silicon Photodiodes With Preamplifier Are Used For Low-Light Measurement Images