G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

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ShenzhenYijiajie Electronic Co., Ltd.

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Model Number : G12181-003A

Place of Origin : Japan

MOQ : 1PCS

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 5000PCS

Delivery Time : 5-8 work days

Packaging Details : Standard packaging

Temperature Coefficient of Sensitivity : 1.08 times/℃

Storage Temperature Range : -55℃ – 125℃

Operating Temperature Range : -40℃ – 100℃

Maximum Reverse Voltage (Vᵣₘₐₓ) : 20 V

Shunt Resistance : 300~1200 MΩ

Junction Capacitance : Typ. 4 pF

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G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

Application Areas:

Optical Communication Systems: Detects high-speed NIR signals (1.3/1.55 μm bands) in fiber optic transceivers, supporting reliable data transmission in telecom networks.
Precision Optical Power Meters: Serves as a core sensing component for measuring NIR optical power in laboratory testing, fiber optic maintenance, and laser calibration.
Laser Monitoring & Testing: Enables real-time monitoring of laser output intensity (e.g., in industrial lasers, medical lasers) and life-cycle testing of laser diodes.
Near-Infrared Photometry: Used in biochemical analysis, material science, and environmental monitoring to measure NIR light absorption, transmission, or reflection.
Aerospace & Defense: Suitable for NIR-based target detection, remote sensing, and optical guidance systems (thanks to wide temperature range and low noise).

Key Features:

Broad NIR Coverage: 0.9–1.7 μm spectral range aligns with key wavelengths for communication, laser, and photometry applications.
Ultra-Low Dark Current: Max. 0.3 nA dark current minimizes background noise, ensuring high signal-to-noise ratio (SNR) for low-light detection.
High-Speed Response: 800 MHz cut-off frequency supports fast signal detection, ideal for high-bandwidth optical communication or pulsed laser monitoring.
Compact & Durable Package: TO-18 metal package offers mechanical stability, easy integration into circuits, and compatibility with standard optical mounts.
Consistent Sensitivity: Low temperature coefficient of sensitivity ensures reliable performance across varying ambient temperatures.

Parameter	Specification (Typ. / Max.)	Test Conditions
Photosensitive Area	φ0.3 mm	-
Number of Sensing Elements	1 (Single-Element)	-
Cooling Method	Non-cooled (Passive Ambient Cooling)	-
Spectral Response Range	0.9 – 1.7 μm	Covers critical NIR bands (e.g., 1.3/1.55 μm for telecom)
Peak Sensitivity Wavelength	~1.55 μm	-
Photosensitivity	Typ. 1.1 A/W	λ = 1.55 μm, Reverse Voltage (Vᵣ) = 5V, Tₐ = 25℃
Dark Current	Max. 0.3 nA	Vᵣ = 5V, Tₐ = 25℃, No Incident Light
Cut-off Frequency (-3dB)	Typ. 800 MHz	Vᵣ = 5V, Load Resistance (Rₗ) = 50Ω, λ = 1.3 μm
Junction Capacitance	Typ. 4 pF	Vᵣ = 5V, Frequency (f) = 1 MHz
Noise Equivalent Power (NEP)	Typ. 3.5×10⁻¹⁵ W/Hz¹/²	λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Detectivity (D*)	Typ. 7.2×10¹² cm·Hz¹/²/W	λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Shunt Resistance	300 – 1200 MΩ	Vᵣ = 0V, Tₐ = 25℃, No Light
Maximum Reverse Voltage (Vᵣₘₐₓ)	20 V	Tₐ = 25℃
Operating Temperature Range	-40℃ – 100℃	Stable performance in harsh industrial environments
Storage Temperature Range	-55℃ – 125℃	-
Temperature Coefficient of Sensitivity	1.08 times/℃	Relative to 25℃, λ = 1.55 μm

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

Product Tags:

Infrared photoelectric sensor for optical communication

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