Sign In | Join Free | My carsrow.com
China ShenzhenYijiajie Electronic Co., Ltd. logo
ShenzhenYijiajie Electronic Co., Ltd.
The company advocates the corporate culture of "integrity and dedication, pragmatic innovation, unity and cooperation, diligence and progress", pays attention to standardized management,
Verified Supplier

4 Years

Home > Infrared Photoelectric Sensor >

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

ShenzhenYijiajie Electronic Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

Model Number : G12180-003A

Place of Origin : Japan

MOQ : 1PCS

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 5000PCS

Delivery Time : 5-8 work days

Packaging Details : Standard packaging

Package Type : TO - 18

Photosensitive Area : φ0.3 mm

Spectral Response Range : 0.9 to 1.7 μm

Peak Sensitivity Wavelength (Typ.) : 1.55 μm

Photosensitivity (Typ.) : 1.1 A/W

Cut - off Frequency (Typ.) : 600 MHz

Contact Now

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

1. Application Areas:

  • Laser Monitoring Systems: Enables real-time detection and monitoring of laser output intensity in industrial laser processing, medical laser equipment, and research-grade laser setups, ensuring stable laser performance.
  • Optical Power Meters: Serves as a core sensing component in optical power measurement devices, accurately capturing near-infrared (NIR) optical power signals for applications like fiber optic testing and laboratory photometry.
  • Laser Diode Life-Cycle Testing: Withstands long-term operation and maintains consistent responsiveness, making it suitable for evaluating the durability and performance degradation of laser diodes over their service life.
  • Near-Infrared (NIR) Photometry: Facilitates precise measurement of NIR light absorption, transmission, or reflection in fields such as biochemical analysis, material science, and environmental monitoring.
  • Optical Communication Systems: Detects high-speed NIR optical signals (e.g., in 1.3 μm or 1.55 μm wavelength bands) for use in fiber optic communication transceivers, ensuring reliable data transmission in telecom networks.

2. Key Features:

  • Broad NIR Spectral Response: Operates across a wavelength range of 0.9–1.7 μm, covering critical bands for optical communications, laser applications, and NIR photometry.
  • High Sensitivity: Delivers a typical photosensitivity of 1.1 A/W (at peak wavelength ~1.55 μm), enabling accurate detection of low-intensity NIR optical signals.
  • Low Dark Current: Features a maximum dark current of 0.5 nA (under reverse voltage VR = 5V), minimizing background noise and improving signal-to-noise ratio (SNR) for precise measurements.
  • High-Speed Performance: Boasts a typical cut-off frequency of 600 MHz, supporting high-speed signal detection for applications like fast optical communication or laser pulse monitoring.
  • Compact & Robust Package: Housed in a TO-18 package (a standard, compact metal package), ensuring mechanical stability, easy integration into circuit designs, and compatibility with standard optical mounting setups.
  • Wide Operating Temperature Range: Functions reliably in temperatures from -40°C to 100°C, making it suitable for harsh industrial environments or outdoor applications.
  • Low Junction Capacitance: Has a typical junction capacitance of 5 pF (VR = 5V), reducing signal distortion and enhancing high-frequency performance.
Sensor Type InGaAs PIN Photodiode -
Package Type TO-18 -
Operation Mode Photoconductive -
Photosensitive Area Diameter φ0.3 mm -
Number of Elements 1 -
Cooling Method Non-cooled -
Spectral Response Range 0.9 – 1.7 μm -
Peak Sensitivity Wavelength ~1.55 μm -
Photosensitivity Typ. 1.1 A/W λ = 1.55 μm, Vₐ = 5V
Dark Current Max. 0.5 nA Vᵣ = 5V, Tₐ = 25℃, No light
Cut-off Frequency (-3dB) Typ. 600 MHz Vᵣ = 5V, Rₗ = 50Ω, λ = 1.3 μm
Junction Capacitance Typ. 5 pF Vᵣ = 5V, f = 1 MHz
Noise Equivalent Power (NEP) Typ. 4.2×10⁻¹⁵ W/Hz¹/² λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Detectivity (D*) Typ. 6.3×10¹² cm·Hz¹/²/W λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Shunt Resistance 200 – 1000 MΩ Vᵣ = 0V, Tₐ = 25℃, No light
Maximum Reverse Voltage (Vᵣₘₐₓ) 20 V Tₐ = 25℃
Window Material Borosilicate Glass -
Operating Temperature Range -40℃ – 100℃ -
Storage Temperature Range -55℃ – 125℃ -
Temperature Coefficient of Sensitivity 1.09 times/℃

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems


Product Tags:

Infrared photoelectric sensor for laser monitoring

      

InGaAs PIN photodiode sensor

      

Laser monitoring system photoelectric sensor

      
 G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems Manufactures

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: ShenzhenYijiajie Electronic Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)